The shift-and-Ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel-length of the MOS transistors. The use of original shift-andratio method for L eff extraction of MOS transistors with halo/pocket implants results in systematic errors for L eff. In this paper a modification of the original method has been proposed and tested by simulation. The values of L eff generated by this method are more reasonable than the original shift-and-ratio method
