A New Distributed Model for Heterojunction Bipolar Transistors(HBTs) for Millimeter-Wave Applications

A new distributed model for Heterojunction Bipolar Transistors (HBT) which considers simultaneously signal and noise behavior of the device in a wide frequency range is presented.The model is extracted through physical structure scaling and it is tried to include most of the known physical parameters, hence having a rich model to be used for prediction in frequency ranges where measurement is difficult. Unlike some other models that only consider two line electrodes (e.g. base and collector in common emitter configuration), the three electrode effects have been taken into account because at high frequencies, the emitter is not directly grounded

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